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| GWM 120-0075X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW Straight leads Surface Mount Device G2 S2 MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25C TC = 90C TC = 25C (diode) TC = 90C (diode) Conditions Conditions TVJ = 25C to 150C Maximum Ratings 75 20 110 85 110 80 V V A A A A Applications AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings Package options * 2 lead forms available - straight leads (SL) - SMD lead version (SMD) Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. 4.0 7.2 2 TVJ = 25C TVJ = 125C 0.1 0.2 115 30 30 130 100 500 100 TVJ = 125C 0.20 0.50 0.01 1.3 1.0 1.6 max. 4.9 8.4 4 1 mW mW V A mA A nC nC nC ns ns ns ns mJ mJ mJ K/W K/W RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH on chip level at VGS = 10 V; ID = 60 A VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V VGS = 20 V; VDS = 0 V TVJ = 25C TVJ = 125C VGS = 10 V; VDS = 36 V; ID = 25 A VGS = 10 V; VDS = 30 V ID = 80 A; RG = 39 inductive load with heat transfer paste (IXYS test setup) IXYS reserves the right to change limits, test conditions and dimensions. 20110407d (c) 2011 IXYS All rights reserved 1-6 GWM 120-0075X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. VSD trr QRM IRM (diode) IF = 80 A; VGS = 0 V IF = 80 A; -diF/dt = 800 A/s VR = 30 V; TJ = 125C typ. 0.9 55 0.9 30 max. 1.2 V ns C A Component Symbol IRMS TVJ Tstg VISOL FC Symbol Rpin to chip IISOL < 1 mA, 50/60 Hz, f = 1 minute mounting force with clip Conditions with heatsink compound coupling capacity between shorted pins and mounting tab in the case typ. Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections Maximum Ratings 300 -55...+175 -55...+125 1000 50 - 250 A C C V~ N Characteristic Values min. typ. 0.6 160 25 max. mW CP Weight pF g IXYS reserves the right to change limits, test conditions and dimensions. 20110407d (c) 2011 IXYS All rights reserved 2-6 GWM 120-0075X1 Straight Leads 37,5 +0,20 (11x) 3 0,05 1,5 1 0,05 GWM 120-0075X1-SL 5 0,05 1 0,05 0,5 0,02 25 +0,20 53 0,15 2,1 4,5 12 0,05 4 0,05 (3x) 6 0,05 Surface Mount Device 37,5 +0,20 1,5 (11x) 3 0,05 1 0,05 GWM 120-0075X1-SMD 5 0,05 0,5 0,02 R1 0,2 25 +0,20 39 0,15 4,5 12 0,05 4 0,05 (3x) 6 0,05 Leads Straight SMD Ordering Standard Standard Part Name & Packing Unit Marking GWM 120-0075X1 - SL GWM 120-0075X1 - SMD IXYS reserves the right to change limits, test conditions and dimensions. 2,1 1 0,05 5 0,10 5 2 Part Marking GWM 120-0075X1 GWM 120-0075X1 Delivering Mode Blister Blister Base Qty. 28 28 Ordering Code 505 960 505 581 20110407d (c) 2011 IXYS All rights reserved 3-6 GWM 120-0075X1 1,2 IDSS = 0.25 mA 250 VDS = 30 V VDSS [V] Normalized 1,1 ID [A] 200 150 100 50 0 TJ = 125C TJ = 25C 1,0 0,9 0,8 0,7 -25 0 25 50 75 100 125 150 0 1 2 TJ [C] 3 4 VGS [V] 5 6 7 Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TVJ 300 250 200 ID [A] 150 100 50 0 5.5 V 5V 4.5 V 4V Fig. 2 Typical transfer characteristic VGS = 20 V 15 V 10 V 300 7V 6.5 V 6V TJ = 25C 250 200 ID [A] VGS = 20 V 15 V 10 V 7V TJ = 125C 6.5 V 6V 150 5.5 V 100 50 0 5V 4.5 V 4V 0 1 2 3 VDS [V] 4 5 6 0 1 2 3 VDS [V] 4 5 6 Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic 2,0 RDS(ON) Normalized 1,6 VGE = 10 V ID = 125 A 12 10 8 6 4 RDS(on) [m] RDS(on) 4,0 4 V 4.5 V 3,5 RDS(ON) Normalized 3,0 2,5 2,0 5V 5.5 V 6V 6.5 V VGS = 10 V ID = 125 A 1,2 RDS(on) normalized 0,8 0,4 -25 0 25 50 75 100 TJ = 125C 7V 1,5 10 V 1,0 0,5 0 50 100 150 ID [A] 200 250 125 150 2 15 V 20 V 300 TJ [C] Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. Fig. 6 Drain source on-state resistance RDS(on) versus ID 20110407d (c) 2011 IXYS All rights reserved 4-6 GWM 120-0075X1 14 12 10 ID = 125 A TJ = 25C 140 120 100 VGS [V] 6 4 2 0 VDS = 55 V ID - [A] 140 8 VDS = 15 V 80 60 40 20 0 20 40 60 80 100 120 0 0 20 40 60 80 100 120 140 160 180 QG [nC] Fig.7 Gate charge characteristic TJ [C] Fig. 8 Drain current ID vs. case temperature TC 0.5 0.4 VDS = 30 V VGS = +10/0 V RG = 39 TJ = 125C td(on) tr 200 160 120 80 40 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 VDS = 30 V VGS = +10/0 V RG = 39 TJ = 125C td(off) 1000 900 800 700 500 400 300 200 100 0 600 Eon, Erec(off) [mJ] Eoff [mJ] 0.2 0.1 0.0 t [ns] Eon Erec(off) x10 Eoff tf 0 20 40 60 80 100 120 140 0 0 20 40 60 80 100 120 140 ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching 1.50 1.25 300 250 200 ID [A] Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching 1.8 1.6 1.4 1.2 1800 1600 1400 td(off) Eon, Erec(off) [mJ] 1.00 0.75 0.50 0.25 0.00 VDS = 30 V VGS = +10/0 V ID = 125 A TJ = 125C tr td(on) VDS = 30 V VGS = +10/0 V ID = 125 A TJ = 125C 1200 Eoff [mJ] t [ns] 150 100 Eon Erec(off) x10 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 Eoff tf 800 600 400 200 50 0 0 20 40 60 80 100 120 RG [] Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching Fig. 12 RG [] 100 120 0 Typ. turn-off energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. 20110407d (c) 2011 IXYS All rights reserved 5-6 t [ns] 1.0 1000 t [ns] 0.3 GWM 120-0075X1 70 VR = 30 V TVJ = 125C 50 45 40 VR = 30 V TVJ = 125C 125 A 80 A 40 A 65 60 80A IRM [A] 1400 trr [ns] 35 30 25 20 15 125 A 55 40 A 50 400 600 800 1000 1200 10 200 400 600 800 1000 1200 1400 -diF /dt [A/s] Fig. 13 Reverse recovery time trr of the body diode vs. di/dt Fig. 14 -diF/dt [A/s] Reverse recovery current IRM of the body diode vs. di/dt 1.6 1.4 1.2 VR = 30 V TVJ = 125C 125 A 250 200 80A Qrr [C] 1.0 0.8 0.6 0.4 40 A IS [A] 150 100 50 0 TJ = -25C 25C 125C 150C 400 600 800 1000 1200 1400 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -diF/dt [A/s] Fig. 15 Reverse recovery charge Qrr of the body diode vs. di/dt 1.4 VGS 0.1 VGS 0.9 ID 0.1 ID td(on) tr td(off) tf 0.9 ID 0.1 ID 0.9 VGS t VSD [V] Fig. 16 Source current IS vs. source drain voltage VSD (body diode) Thermal Response [K/W] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 GWM 120-0075X1 VDS ID t 1 10 100 1000 10000 Time [ms] Fig. 17 Definition of switching times Fig. 18 Typ. therm. impedance junction to heatsink ZthJC 20110407d IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 6-6 |
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